OVERVIEW

The R. Ferreira Research Group (Spintronics R. Ferreira Group - INL) is looking for a qualified motivated and experienced research engineer to reinforce the team of engineers to work on spintronic processes and devices within the INL cleanroom (Micro and Nanofabrication - INL) in the context of multiple research projects including, but not limited to, H2020-Pathfinder RadioSpin (https://cordis.europa.eu/project/id/101017098) and H2020-RIA Nimfeia (https://cordis.europa.eu/project/id/101070290).
The focus of the work will concern the development of new spintronic device concepts and advanced nanofabrication processes involving magnetic tunnel junctions that move the technological capacity of the research group well beyond the state-of-the-art in what concerns magnetic field sensing and RF nanodevices operating in a context of non-conventional computation.
Job Duties

The job duties will be the following:

• Conduct exploratory tests towards the optimisation of critical micro and nanofabrication process steps used in the production of TMR devices in 200mm substrates. These might concern deposition (new MTJ stacks), lithography (pushing device areas down) or etching (new etching processes optimized for high density nano-pillars at minimum dimensions);
• Bulk characterisation of new MTJ stacks / new materials making use of CIPT (in-plane TMR measurements), VSM (magnetic characterization) and 4-point contact resistance measurements (resistivity and uniformity characterisation);
• Design fabrication process flows and produce run-sheets used in the micro and nanofabrication of MTJ devices for a multitude of different uses, and covering a wide range of specifications (from ultra-low noise magnetic field micro-sensors down to nano-oscillators in the sub-100nm range);
• Design masks compatible with the new process flows established (using AUTOCAD and similar toos), and produce hard masks when suitable (in-house or outsourcing);
• Micro and nanofabrication of optimised devices using the new process flows established, documenting all the process steps;
• Perform basic electrical measurement and characterisation tests to extract key figures of merit of the devices fabricated, and characterise the uniformity and yield of the new processes;
• Produce reports and analyse data extracted from the devices produced that enable a continuous improvement of the performance of several classes of devices;
• Make use of the devices, and engineers participating in the integration of such devices, at a system level (homogeneous and heterogeneous integration of MTJs devices), with CMOS;
• Homogeneous integration of MTJ devices with other technologies available at INL, including MEMS and 2D materials and devices;
• Integrate devices in data acquisition circuits feeding AI data processing and analysis.
• Strongly interact with people of different backgrounds, including those responsible for the micro and nanofabrication of standalone MTJ devices, PIs leading research projects.

Mandatory Qualifications

EDUCATION

• PhD in Physics, Physical Engineering, Materials Science, Electrical Engineering, or any other relevant experience.

Experience and Technical Skills

• 3+ years of postdoc experience;
• Previous hands-on experience in micro and nanofabrication of Magnetic Tunnel Junction devices;
• Previous hands-on experience in electrical and magnetic characterisation of Magnetic Tunnel Junction;
• Track record of high quality publications.

Other Valued Skills and Experience

• Programming skills to automate data acquisition experiments (e.g., Labview, Matlab, Visual Studio) is valued;
• Experience in simulation tools (e.g., COMSOL, micromagnetism simulators) is valued;
• Previous participation in collaborative international research projects is valued;
• Previous experience in the submission of competitive research proposals is valued.

PERSONAL SKILLS

• “Hands-on” approach together with a high commitment in respecting working deadlines;
• Problem Solving ability;
• Customer orientation;
• Ability to work independently and as team player;
• Good communication skills.

• Conduct exploratory tests towards the optimisation of critical micro and nanofabrication process steps used in the production of TMR devices in 200mm substrates. These might concern deposition (new MTJ stacks), lithography (pushing device areas down) or etching (new etching processes optimized for high density nano-pillars at minimum dimensions);
• Bulk characterisation of new MTJ stacks / new materials making use of CIPT (in-plane TMR measurements), VSM (magnetic characterization) and 4-point contact resistance measurements (resistivity and uniformity characterisation);
• Design fabrication process flows and produce run-sheets used in the micro and nanofabrication of MTJ devices for a multitude of different uses, and covering a wide range of specifications (from ultra-low noise magnetic field micro-sensors down to nano-oscillators in the sub-100nm range);
• Design masks compatible with the new process flows established (using AUTOCAD and similar toos), and produce hard masks when suitable (in-house or outsourcing);
• Micro and nanofabrication of optimised devices using the new process flows established, documenting all the process steps;
• Perform basic electrical measurement and characterisation tests to extract key figures of merit of the devices fabricated, and characterise the uniformity and yield of the new processes;
• Produce reports and analyse data extracted from the devices produced that enable a continuous improvement of the performance of several classes of devices;
• Make use of the devices, and engineers participating in the integration of such devices, at a system level (homogeneous and heterogeneous integration of MTJs devices), with CMOS;
• Homogeneous integration of MTJ devices with other technologies available at INL, including MEMS and 2D materials and devices;
• Integrate devices in data acquisition circuits feeding AI data processing and analysis.
• Strongly interact with people of different backgrounds, including those responsible for the micro and nanofabrication of standalone MTJ devices, PIs leading research projects