DRAM Device and Process Integration Engineer at Micron Technology
Boise, Idaho, United States -
Full Time


Start Date

Immediate

Expiry Date

13 Feb, 26

Salary

0.0

Posted On

15 Nov, 25

Experience

2 year(s) or above

Remote Job

Yes

Telecommute

Yes

Sponsor Visa

No

Skills

Semiconductor Device Physics, DRAM, NAND, NOR, Statistical Data Analysis, Semiconductor Process Flow, Device Characterization, CMOS Process Integration, Programming Languages, AI, Software Tools

Industry

Semiconductor Manufacturing

Description
Enable next generation DRAM in the manufacturing Fab. Ramp up production yield and deliver high quality DRAM products to customers. Analyze electrical and inline data to identify yield detractors and process anomalies. Drive improvement of device performance and reliability through process and structure optimization. Collaborate with cross-functional teams (YE, Process, QA, PE et al) to drive continuous improvement. Device characterization and deep diving to understand device performance and reliability issues. Monitor and maintain device performance on the production line. Make sure that the Espec satisfies all production-grade requirements. Communicate and present the results to big audiences. Strong knowledge of semiconductor device physics is required. Knowledge of mainstream memory such as DRAM, NAND, NOR et al. Knowledge of statistical data analysis. Knowledge of semiconductor process flow. 3+ years of post education semiconductor industry experience M.S in Electrical Engineering, Materials Engineering, Chemical Engineering or Physics Knowledge of advanced DRAM technology. Device characterization lab experience. Advanced CMOS process integration experience. Knowledge of programming languages, AI, software tools
Responsibilities
Enable next generation DRAM in the manufacturing Fab and ramp up production yield. Collaborate with cross-functional teams to drive continuous improvement and monitor device performance on the production line.
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