GaN Compact Device Modeling Engineer at GlobalFoundries US Inc

Kolkata, west bengal, India -

Full Time

Start Date

Immediate

Expiry Date

11 Sep, 26

Salary

0.0

Posted On

13 Jun, 26

Experience

5 year(s) or above

Remote Job

Yes

Telecommute

Yes

Sponsor Visa

Skills

GaN Compact Modeling, Device Model Extraction, Semiconductor Physics, S-parameters, ICCAP, MBP, BSIMPro, Statistical Data Analysis, Testchip Planning, PDK Development, RF Analysis, Characterization Test Planning

Industry

Semiconductor Manufacturing

Description

Job Title: GaN Compact Device Modeling Engineer About GlobalFoundries: GlobalFoundries is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world’s most inspired technology companies. With a global manufacturing footprint spanning three continents, GlobalFoundries makes possible the technologies and systems that transform industries and give customers the power to shape their markets. For more information, visit www.gf.com Job Introduction: We are seeking a highly motivated GaN Device Engineer to lead the compact modeling of GaN devices at GF's Power product line India Site. In this role, engineer will have to support testchip planning/ GaN compact model extratcion/PDK & customer interaction for all the power GaN technologies. Analyze and represent semiconductor devices with industry standard models. Applies knowledge of semiconductor physics and devices to evaluate and analyze test results Works closely with device and other modeling engineers to interpret test results and debug device and measurement issues Essential Responsibilities: Device model extraction for GaN power devices. Definition of test structures and layout as and when necessary. Develop and submit characterization testplan for model extraction Collaborate with different team like - Global GaN team, Technology development team, characterization measurement team, design team. Interaction with different modeling team to resolve discrepancies in the data, model etc. Required qualifications: Education/Experience - M.S/PhD with focus on semiconductor devices Experience required - MS with 6+ years or PhD with 3-5 years of experience in power semiconductor domain. Knowledge of GaN semiconductor physics and application in understanding device data including Diode, Varactor, MOSFET etc. Knowledge of S-parameters and their application in extracting device models. Hands on experience with one of the industry level model extraction tools like ICCAP, MBP, BSIMPro is must. Strong statistical data analysis and problem-solving capability. Exposure to RF a plus (S-parameters etc.) Fluency in English Language - written & verbal Preferred qualifications GlobalFoundries is an equal opportunity employer, cultivating a diverse and inclusive workforce. We believe having a multicultural workplace enhances productivity, efficiency and innovation whilst our employees feel truly respected, valued and heard. As an affirmative employer, all qualified applicants are considered for employment regardless of age, ethnicity, marital status, citizenship, race, religion, political affiliation, gender, sexual orientation and medical and/or physical abilities. All offers of employment with GlobalFoundries are conditioned upon the successful completion of background checks, medical screenings as applicable and subject to the respective local laws and regulations. Information about our benefits you can find here: https://gf.com/about-us/careers/opportunities-asia

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Responsibilities

Lead the compact modeling of GaN power devices, including model extraction and testchip planning. Collaborate with global technology and design teams to resolve data discrepancies and support PDK development.