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Memory Design Engineer, DRAM at Micron Technology

Boise, Idaho, United States -

Full Time

Start Date

Immediate

Expiry Date

11 Feb, 26

Salary

0.0

Posted On

13 Nov, 25

Experience

0 year(s) or above

Remote Job

Yes

Telecommute

Yes

Sponsor Visa

Skills

Memory Design, DRAM, Circuit Simulations, Schematic Design, Floor-planning, Placement, Routing Optimization, Reliability Verification, Design Validation, Tape-out Revisions, Communication, Teamwork, DDR5, LPDDR5, GDDR6, HBM3

Industry

Semiconductor Manufacturing

Description

Contribute to the design, layout, and optimization of memory circuits based on product specifications Design schematic blocks including memory arrays, buffers, control logic, address decode, datapath, and internal test logic Floor-planning, placement, and routing optimization Conduct circuit simulations using industry-standard tools (e.g., FINESIM, HSPICE, VERILOG) Model parasitics and perform reliability verification Support design validation, reticle experiments, and tape-out revisions Optimize design rules for cost, performance, and functionality Import layout parasitic data into simulation environments Communicate best practices and contribute to design documentation Participate in continuing education and competitor analysis. Solicit feedback from Standards, CAD, modeling, and verification teams to improve design quality. Bachelor's degree in Electrical or Computer Engineering Strong communication and teamwork skills. 1+ years of experience with DDR5, LPDDR5, GDDR6, or HBM3. Master's degree in Electrical or Computer Engineering

Responsibilities

Contribute to the design, layout, and optimization of memory circuits based on product specifications. Conduct circuit simulations and support design validation and tape-out revisions.