MTS, Design Engineer at onsemi

Scottsdale, Arizona, United States -

Full Time

Start Date

Immediate

Expiry Date

19 May, 26

Salary

0.0

Posted On

18 Feb, 26

Experience

10 year(s) or above

Remote Job

Yes

Telecommute

Yes

Sponsor Visa

Skills

GaN HEMT Device Physics, Fab Processes, Packaging, TCAD Simulations, Layout Tools, Electrical Characterization, Device Testing, Degradation Mechanisms, Failure Analysis, Reliability Tests, IC Circuitry, Power Electronics, Process Integration, Device Fabrication, Analytical Skills, Problem-Solving

Industry

Semiconductor Manufacturing

Description

onsemi is currently seeking a highly experienced senior device and process integration expert to develop gallium nitride high electron mobility transistor (GaN HEMT) power switching devices for industrial and automotive applications. onsemi (Nasdaq: ON) is driving disruptive innovations to help build a better future. With a focus on automotive and industrial end-markets, the company is accelerating change in megatrends such as vehicle electrification and safety, sustainable energy grids, industrial automation, and 5G and cloud infrastructure. With a highly differentiated and innovative product portfolio, onsemi creates intelligent power and sensing technologies that solve the world’s most complex challenges and leads the way in creating a safer, cleaner, and smarter world. More details about our company benefits can be found here: https://www.onsemi.com/careers/career-benefits We are committed to sourcing, attracting, and hiring high-performance innovators, while providing all candidates a positive recruitment experience that builds our brand as a great place to work. onsemi is an Equal Opportunity Employer. All qualified applicants will receive consideration for employment without regard to race, ethnicity, color, religion, ancestry, national origin, age, marital status, pregnancy, sex, sexual orientation, physical or mental disability, medical condition, genetic information, military or veteran status, gender identity, gender expression, or any other protected category under applicable federal, state, or local laws. If you are an individual with a disability and require a reasonable accommodation to complete any part of the application process, or are limited in the ability or unable to access or use this online application process and need an alternative method for applying, you may contact Talent.acquisition@onsemi.com for assistance.

Responsibilities

The role involves developing gallium nitride high electron mobility transistor (GaN HEMT) power switching devices tailored for industrial and automotive applications. This requires expertise in device and process integration for these advanced power technologies.