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New College Grad - DRAM Device and Process Integration Engineer at Micron Technology
Boise, Idaho, United States -
Full Time

Start Date

Immediate

Expiry Date

07 Apr, 26

Salary

0.0

Posted On

07 Jan, 26

Experience

0 year(s) or above

Remote Job

Yes

Telecommute

Yes

Sponsor Visa

No

Skills

Semiconductor Device Physics, DRAM, NAND, NOR, Statistical Data Analysis, Digital Circuit Operation, Analog Circuit Operation, Semiconductor Process Flow, Communication Skills, Self-Motivation, Device Characterization, Process Optimization, Cross-Functional Collaboration, Production Yield, Device Performance, Reliability Issues

Industry

Semiconductor Manufacturing

Description
Enable next generation DRAM in the manufacturing Fab. Ramp up production yield and deliver high quality DRAM products to customers. Analyze electrical and inline data to identify yield detractors and process anomalies. Drive improvement of device performance and reliability through process and structure optimization. Collaborate with cross-functional teams (YE, Process, QA, PE et al) to drive continuous improvement. Device characterization and deep diving to understand device performance and reliability issues. Monitor and maintain device performance on the production line. Make sure that the Espec satisfies all production-grade requirements. Communicate and present the results to big audiences. Strong knowledge of semiconductor device physics is required. Knowledge of mainstream memory such as DRAM, NAND, NOR et al. Knowledge of statistical data analysis. Knowledge of basic digital and analog circuit operation. Understanding basic semiconductor process flow. Good communication skills and self-motivation. MS degree in Electrical Engineering or Materials Engineering Device characterization lab experience. Clean room experience. Knowledge of programming languages, AI, software tools 0-2 years of experience
Responsibilities
Enable next generation DRAM in the manufacturing Fab and ramp up production yield. Analyze data to identify yield detractors and drive improvements in device performance and reliability.