Senior Principal GaN Epitaxy Engineer (m/f/d) at Nexperia Germany GmbH
Hamburg, , Germany -
Full Time


Start Date

Immediate

Expiry Date

01 Oct, 25

Salary

0.0

Posted On

02 Jul, 25

Experience

5 year(s) or above

Remote Job

Yes

Telecommute

Yes

Sponsor Visa

No

Skills

Good communication skills

Industry

Information Technology/IT

Description

This is your new job

  • Work directly with the MOCVD tool in GaN on silicon development on 6-inch and 8-inch substrates
  • Set priorities for the working group in terms of access to the reactor
  • Close cooperation with the other epi focused members in Hamburg and development teams and application teams
  • Lead engineering work on the epi reactor including diagnosing problems with the tool
  • Support and complete measurements of GaN epi and present results
  • Develop work plans and report on project progress in detail
  • Perform material and electrical characterizations of the grown layer stacks
  • Actively contribute to the research programs and joint development programs with external partners
  • Define, organize, and validate process developments for the epitaxial growth of GaN on silicon
  • Identify process requirements and development opportunities
  • Execute process optimisation and development projects in a timely manner
  • Transfer the optimised processes to the engineering support and operational teams (“line releases”) or to our industrial partners (“tech transfers”) and will include documenting the processes, giving classroom and field trainings, and supporting the engineering support or industrial partners during their initial ramp up phase
  • Aspects of practical work will be in the cleanroom
  • Report about your work to industrial partners, on international conferences, publish key results in scientific journals and turn new ideas into IP

This is you

  • Minimum Master’s Degree (PhD preferred) in physics, material sciences or in a similar engineering field
  • More than 5 years of relevant working experience
  • Experience working with MOVCD/MOVPE production tool sets
  • Very good understanding and experience of growing GaN from silicon substrate through buffer layers into bulk GaN
  • Experience leading small teams and creating positive results
  • Fundamental understanding on the physical and chemical processes that govern the growth dynamics of GaN on Si substrates
  • Experience working in dynamic semiconductor industry and the commercial demands placed on time to market with new process technologies
  • Team player with a strong drive to achieve success
  • Fluency in English, conversational German language skills
  • Good communication skills, both verbal and in writing

Talent acquisition based on Nexperia vacancies is not appreciated. Nexperia job adverts are Nexperia copyright © material and the word Nexperia® is a registered trademark.
D&I Statement
As an equal-opportunity employer, Nexperia values diversity not just because it is the right thing to do but because diverse teams perform better. We are dedicated to being inclusive, and a proof point of this dedication is that we were the main partner of the very first Dutch Paralympic Team NL House during the Paris 2024 Paralympic Games. Our recruitment process is inclusive and accessible to all, and we consider all applicants fairly, as well as providing a safe work environment and reasonable adjustments where requested.
In addition, we offer our colleagues the possibility to join employee resource groups such as the Pride Network Group or global and local Women’s groups. Nexperia is committed to increasing women in management positions to 30% by 2030

Responsibilities

Please refer the Job description for details

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