Senior / Staff Engineer - GaN Epitaxy at Infineon Technologies AG Australia

, , Singapore -

Full Time

Start Date

Immediate

Expiry Date

16 Feb, 26

Salary

0.0

Posted On

18 Nov, 25

Experience

5 year(s) or above

Remote Job

Yes

Telecommute

Yes

Sponsor Visa

Skills

GaN Epitaxy, MOCVD, Material Science, Device Engineering, Metrology, Material Characterisation, Data Analysis, Communication Skills, III-V Hetero-epitaxy, AlGaN/GaN HEMT, Troubleshooting, Wafer Products, Epitaxial Processes, Growth Recipes, Device Concepts

Industry

Semiconductor Manufacturing

Description

Development and optimisation of GaN on Si & GaN on Sapphire MOCVD epitaxy processes for power switching applications Design GaN epitaxial layer stacks and growth recipes based on device requirements and performance targets Develop and implement new epitaxial processes for advanced wafer products Troubleshoot and resolve issues that arise during material growth to ensure high-quality epitaxial layers Work closely with device engineers to develop next-generation technologies Ph.D in Material Science (or) Masters in Material Science / Chemistry/ Solid State Physics with 3+ years of Industry experience (or) Undergraduate degree with 5+ years of Industry experience with focus onIII-V Hetero-epitaxy MOCVD Hands-on experience in operating MOCVD tools (Aixtron / Veeco /others) for AlGaN/GaN HEMT systems on Silicon and Sapphire Substrates(critical requirement) Experience in Metrology and material characterisation techniques and tools ( for eg - AFM/TEM/XRD/PL/Ellipsometry/FTIR) (critical requirement) Experience in III-V device processing tools and processes (for eg -RIE/ Wet etch / Passivation) (is a plus) Understanding of basic device concepts pertaining to AlGaN/GaN HEMTs for power switching applications (is a plus) Expertise in data organisation / data analysis Good communication skills and ability to work with cross-functional teams in a global R&D organization We are on a journey to create the best Infineon for everyone. This means we embrace diversity and inclusion and welcome everyone for who they are. At Infineon, we offer a working environment characterized by trust, openness, respect and tolerance and are committed to give all applicants and employees equal opportunities. We base our recruiting decisions on the applicant´s experience and skills.

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Responsibilities

The role involves the development and optimization of GaN epitaxy processes for power switching applications. The engineer will troubleshoot issues during material growth and collaborate with device engineers on next-generation technologies.