Staff Memory Design Engineer, HBM at Micron Technology

Richardson, Texas, United States -

Full Time

Start Date

Immediate

Expiry Date

07 Apr, 26

Salary

0.0

Posted On

07 Jan, 26

Experience

5 year(s) or above

Remote Job

Yes

Telecommute

Yes

Sponsor Visa

Skills

CMOS Circuit Design, VLSI, Analog Circuit Design, Circuit Simulations, Power Performance Analysis, Reliability Analysis, Parasitic Impacts, Design Documentation, Cadence Virtuoso, FINESIM, HSPICE, VERILOG, DRAM Subsystem Architecture, Cross-Department Collaboration, Problem-Solving, Technical Leadership

Industry

Semiconductor Manufacturing

Description

Design digital, analog, and memory core circuits using CMOS logic and transistors, implementing device specifications from concept to solution. Create optimized floorplans for circuit placement, routing, power delivery, sense margins, array timing, and die size, including layout leadership. Conduct circuit simulations using FINESIM, HSPICE, and VERILOG; analyze power, performance, reliability, and parasitic impacts. Validate builds through reticle experiments, tape‑out revisions, and simulation‑to‑silicon correlation, identifying required schematic edits. Prepare and maintain design documentation while contributing to best‑known practices and departmental training. Collaborate with global build, verification, product engineering, test, probe, process integration, assembly, and marketing teams to ensure manufacturability and quality. Manage layout and develop resources, track project tasks, and serve as the point of contact for design, layout, verification, and test issues. Prepare project status reports and lead design reviews to communicate progress and technical decisions. Coursework in CMOS Circuit Design, VLSI, and Analog Circuit Design, with understanding of device reliability and circuit floor planning. Proficiency with Cadence Virtuoso, and experience simulating with FINESIM, HSPICE, and VERILOG. Strong analytical and problem‑solving skills with proven significant technical contributions and a record of innovation. Expertise in DRAM subsystem architecture, specification, operation, or design, including cross‑department technical leadership experience. Ability to proactively collaborate across multiple engineering organizations to optimize manufacturing quality, cost, reliability, and time‑to‑market. Self‑motivated with strong problem‑solving abilities and a drive to discover new solutions. Deep knowledge of industry‑specific technologies and competitive trends. Excellent communication and interpersonal skills for cross‑functional collaboration. BS or MS in Electrical Engineering or related field plus 6 years of experience in DRAM design, product, or system.

Responsibilities

Design digital, analog, and memory core circuits using CMOS logic and transistors, and create optimized floorplans for circuit placement and routing. Collaborate with various teams to ensure manufacturability and quality while managing layout and project tasks.