GaN Process Development Engineer (f/m/d) 1

at  XFAB Silicon Foundries

The X-FAB Group - about 4,000 employees - is the leading analog/mixed-signal foundry manufacturing silicon wafers for analog-digital integrated circuits (mixed-signal ICs). X-FAB customers benefit from high-performance technologies, excellent technical design and prototyping services; and fast, easy and flexible foundry access worldwide.

GAN PROCESS DEVELOPMENT ENGINEER (F/M/D) 1

Dresden, Germany
X-FAB is looking for a GaN / Wide Band Gap device and process development engineer to join our global Process Development team, in Dresden, Germany, but working as part of an international organization developing Wide Band Gap technologies

• Development of GaN / Wide Band Gap semiconductor devices and processes.
• Define semiconductor process flows and device architectures.
• TCAD simulation of devices and processes.
• Definition, implementation and evaluation of experiments using Design of Experiments (DoE) methodology.
• Development and design of test structures.
• Electrical characterization of GaN / Wide Band Gap devices.
• Process integration and cooperation with other departments within X-FAB.
• Offer technical support to customers.
• Cooperation with external partners.
• Management of development projects, working in interdisciplinary and international teams.