HBM Memory Subsystem Architect - Technical Leadership Member

at  Micron

Atlanta, Georgia, USA -

Start DateExpiry DateSalaryPosted OnExperienceSkillsTelecommuteSponsor Visa
Immediate01 Oct, 2024USD 367000 Annual01 Jul, 202410 year(s) or aboveGood communication skillsNoNo
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Description:

Our vision is to transform how the world uses information to enrich life for all.
Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.

OUR OPPORTUNITY SUMMARY:

For more than 43 years, Micron Technology, Inc. has redefined innovation with the world’s most advanced memory and semiconductor technologies. We’re an international team of visionaries and scientists, developing groundbreaking technologies that are transforming how the world uses information to enrich life.
Our HBM Design Architecture group is looking for an experienced Memory Subsystem Architect to work with internal and external partners to investigate, define, and develop innovative new memory subsystem architectures building on our Industry leading HBM product solutions. The AI/ML transformation underway is demanding breakthrough memory and computing solutions, and we believe our HBM product roadmap is foundational in enabling these new innovative solutions. The HBM Design Architecture group collaborates closely with Industry partners to investigate and develop products aligned with customer needs and technology trends extending over 3-5 year timeframe.
In HBM DEG (High Bandwidth Memory - DRAM Engineering Group), we innovate and integrate end-to-end groundbreaking front-end and backend processes with groundbreaking design, debugging various tests, and qualification techniques to develop the lowest power per bit solutions to improve customer experience in the field of ML (Machine Learning) and AI (Artificial Intelligence). The success of a sophisticated product such as HBM relies vastly on vertical integration and the various engineering working in unison. To provide greater detail, our HBM technology pertains to stacking numbers of DRAM chips along with a logic chip within one package through an assembly technology called TSV (Through Silicon Via). This greatly increases the memory density in a package, while allowing very high-speed signal transmission. Furthermore, “high bandwidth”; is an outstanding memory design area where custom gate-level design and RTL style logic design are blended into the same product, and most of the DDR or LPDDR design is based on the gate-level design only. Lastly, verification and testing (validation) of HBM is the most challenging due to the total size of the design and complexity of the functions, and in addition to craft, many innovations are needed for verification and validation of the HBM product, thereby making it uniquely exciting.
Our team vision is a continuing desire to develop your skills working in an inclusive diverse environment of multicultural Teams across worldwide geographies! Enabling the creative career path you deserve with a collaborative environment and groundbreaking technology and growing upon your imagination and creativity.

(Disclaimer): While you may not exhibit all of the characteristics/skills listed below today, we are highly interested in a teammate who is motivated to grow in technical breadth and depth. Suppose you are open to learning while being a valued member of a team of best-in-class engineers. In that case, we are determined to help build upon your existing foundation, while rapidly growing your individual and collaborative skills in this exciting and outstanding opportunity.

  • This position will be a hybrid role located in either Allen, TX, Atlanta, GA or, Folsom, CA
  • The seniority level offered will be based on a combination of experience and education.

HOW TO QUALIFY:

  • Bachelor’s or Master’s degree in Electrical Engineering, Computer Engineering, or a related field.
  • Minimum of 10 years of experience in memory subsystem architecture and design.
  • Deep understanding of memory controller design and memory types (DDR, LPDDR, GDDR, HBM).
  • Experience with PHY design and understanding of signal integrity issues.
  • Proficiency in Network-on-Chip (NoC) architecture and design.
  • Familiarity with industry-standard bus protocols such as AXI, AMBA, AHB, DFI, HIF, etc
  • Strong analytical and problem-solving skills
  • Excellent written and verbal communication skills

Responsibilities:

Please refer the Job description for details


REQUIREMENT SUMMARY

Min:10.0Max:15.0 year(s)

Information Technology/IT

IT Software - System Programming

Information Technology

Graduate

Electrical, Electrical Engineering, Engineering

Proficient

1

Atlanta, GA, USA