Master Thesis (m/f/d) - SiC Development

at  Nexperia Germany GmbH

What you will do

• Conduct experimental research on the performance and reliability of SiC high-power MOSFETs under various electrical stress conditions
• Explore and develop testing methodologies to assess and analyze Bipolar Degradation (BPD) phenomena in semiconductor devices
• Perform literature research to support your findings and methodologies
• Collaborate with a team of researchers and engineers to optimize testing protocols and improve device reliability

What you will need

• Enrolled student of materials science, electrical engineering, physics, chemistry, or a similar field.
• Basic knowledge in semiconductor theory, particularly related to MOSFET power semiconductors.
• Basic knowledge and skills in soldering, along with hands-on experience with measuring equipment such as oscilloscopes and lab power supplies.
• Fluent in English, verbal and written, knowledge of German is beneficial
• Proficient in MS Office

Conditions

• Full-time fixed-term contract
• Attractive remuneration and a bonus for a very good final thesis
• Location: Hamburg

• Conduct experimental research on the performance and reliability of SiC high-power MOSFETs under various electrical stress conditions
• Explore and develop testing methodologies to assess and analyze Bipolar Degradation (BPD) phenomena in semiconductor devices
• Perform literature research to support your findings and methodologies
• Collaborate with a team of researchers and engineers to optimize testing protocols and improve device reliabilit