PD - MBE nitride heterostructures with polarization engineering

at  Paul Drude Institut Berlin

About the position
Post Doc (m/f/d) -
Molecular-beam epitaxy of novel nitride heterostructures exploiting polarization engineering
Wurtzite group III-nitride semiconductor heterostructures exhibit strong spontaneous and piezoelectric polarization fields on the order of a few MV/cm along the polar c-axis. Polarization engineering in these heterostructures offers innovative building blocks for photonic and electronic devices.
In this project, the successful candidate will work on the design and molecular beam epitaxy of polar group III-nitride heterostructures for novel electronic devices utilizing polarization engineering.
Particularly interesting in this context are N-polar GaN/AlN high-electron-mobility transistors on Si. Such structures offer significant advantages over their conventional Ga-polar counterparts for high-power and high-frequency applications due to their scalability, low contact resistance, improved gate control of the 2D electron gases, low substrate cost, and compatibility with the existing Si CMOS technology.

Your responsibilities

• Growth of nitride heterostructures by molecular beam epitaxy
• Sample characterization by x-ray diffractometry, atomic force microscopy, and Hall-effect and C-V measurements
• Band diagram simulation using 1D Poisson-Schrödinger solver
• Data analysis and planning of experiments
• Presentation of results at conferences and in publications

Your profile

• PhD in physics, electrical engineering, materials science, or a related field
• Preferentially background in device physics or nanotechnology
• Experience with device fabrication is advantageous
• Hands-on experience with nitride-MBE is advantageous

Position and salary
This position is available from November 15, 2024 and is limited to a 2-year period with excellent chance to be extended.
Salary and benefits are according to the Treaty for German public service (TVöD Bund) to a level of E13.

What we offer

• Modern laboratories with a wide range of experimental techniques
• Supportive environment with experts for various scientific sub-fields and a low number of students per advisor
• International and culturally diverse community
• Location in the heart of Berlin with excellent public transport connections
• a subsidized travel ticket
• Possibility to participate in professional development and/or student exchange programs

About PDI
The Paul-Drude-Institute is part of the Forschungsverbund Berlin e.V. and a member of the Leibniz Association. The institute carries out basic and applied research at the nexus of materials science, condensed matter physics, and device engineering.
In the Epitaxy department at PDI, a dedicated team of scientists, technicians, postdocs, and students operates 13 MBE systems for the synthesis of a wide range of material systems, including arsenides, nitrides, oxides, and 2D materials. This in-house collaborative environment offers abundant opportunities for both direct and indirect learning in various MBE technologies, making it an ideal place to start a career in the field.
For scientific information about the project, please contact Dr. YongJin Cho.
Inclusive & equal opportunity employer
With approximately 100 employees and more than 15 nationalities, PDI is committed to building a talented, inclusive, and culturally diverse workforce. We understand that our shared future is guided by basic principles of fairness and mutual respect. Among equally qualified applicants, preference will be given to candidates from marginalized groups. As an equal opportunity and family-friendly employer, we offer highly flexible employment conditions, such as flexible working hours, parental leave, and home office, and we strive to create a family- and life-conscious working environment.
How to apply
Please upload your application by November 7, 2024.

Your documents should include

• a dedicated cover letter
• CV
• diploma(s) and transcript(s)
• publication list (if present)
• contact information of two references

• Growth of nitride heterostructures by molecular beam epitaxy
• Sample characterization by x-ray diffractometry, atomic force microscopy, and Hall-effect and C-V measurements
• Band diagram simulation using 1D Poisson-Schrödinger solver
• Data analysis and planning of experiments
• Presentation of results at conferences and in publication