Post Doc (f/d/m) - Epitaxy - 2D (C-doped) h-BN films

at  Paul Drude Institut Berlin

About the position
Postdoc (m/f/d)
Epitaxial growth and characterization of 2D (C-doped) h-BN films
Hexagonal BN (h-BN) is a two-dimensional (2D) large-band gap insulating material with many unusual properties that has recently attracted increasing attention. Its versatile potential in 2D electronics has been widely reported. It serves multiple roles, acting as an ultra-flat substrate for reducing charge fluctuations, a passivation layer, and as atomically thin tunnel barriers. Furthermore, h-BN can host defect centers acting as single photon emitters in both the visible and ultraviolet spectral ranges, which makes this material highly relevant for quantum optics.
To date, the vast majority of the experimental demonstrations on the exceptional properties of this material has been carried out using h-BN flakes mechanically exfoliated from bulk crystals, whereas integration into practical devices will ultimately require h-BN layers synthesized over a large-scale with a high degree of control, e.g., over doping which is known to be directly linked to the single photon emission observed in this material.

Your responsibilities

• Large-area epitaxial growth of (Carbon-doped) h-BN films on different substrates using high-temperature molecular beam epitaxy
• Structural/morphological characterization of the grown material via different methods including scanning probe microscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy
• Data analysis and planning of experiments
• Presentation of results at conferences and in written publications

Your profile

• PhD in physics, materials science, or a related field
• Experience with epitaxial growth of materials, in particular MBE of layered materials
• Experience with characterization of materials via different methods

Position and salary
This position is available from February 2025 and is limited to a 2-year period with excellent chance to be extended.
Salary and benefits are according to the Treaty for German public service (TVöD Bund) to a level of E13, taking work experience and special professional skills into account.

What we offer

• Job security and a good work-life balance
• International and culturally diverse community
• possibility to work partially mobile
• Modern laboratories with a wide range of experimental techniques
• Supportive environment with experts for various scientific sub-fields and a low number of students per advisor
• Location in the heart of Berlin with excellent public transport connections
• a subsidized travel ticket
• Possibility to participate in professional development and/or student exchange programs

About PDI
The Paul-Drude-Institute is part of the Forschungsverbund Berlin e.V. and a member of the Leibniz Association. The institute carries out basic and applied research at the nexus of materials science, condensed matter physics, and device engineering.
For scientific information about the project, please contact Dr. Joao Marcelo Jordao Lopes.
Inclusive & equal opportunity employer
With approximately 100 employees and more than 15 nationalities, PDI is committed to building a talented, inclusive, and culturally diverse workforce. We understand that our shared future is guided by basic principles of fairness and mutual respect.
As an equal opportunity and family-friendly employer, we offer highly flexible employment conditions, such as flexible working hours, parental leave, and home office, and we strive to create a family- and life-conscious working environment.
Among equally qualified applicants, preference will be given to candidates from marginalized groups. That means, we welcome every qualified application, regardless of sex and gender, origin, nationality, religion, belief, health and disabilities, age or sexual orientation.
PDI follow our gender equality plan, so we want to engage women* to apply at PDI to balance the gender ratio in science. Disabled applicants with equal qualification and aptitude will be given preferential consideration.
How to apply
Please upload your application by December 5, 2024.

Your documents should include

• a dedicated cover letter
• CV
• diploma(s) and transcript(s)
• publication list (if present)
• contact information of two references

• Large-area epitaxial growth of (Carbon-doped) h-BN films on different substrates using high-temperature molecular beam epitaxy
• Structural/morphological characterization of the grown material via different methods including scanning probe microscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy
• Data analysis and planning of experiments
• Presentation of results at conferences and in written publication