Post-Doc position on networks of defects in Transition Metal Dichalcogenide
at Istituto Italiano di Tecnologia
Pisa, Toscana, Italy -
Start Date | Expiry Date | Salary | Posted On | Experience | Skills | Telecommute | Sponsor Visa |
---|---|---|---|---|---|---|---|
Immediate | 20 Jan, 2025 | Not Specified | 29 Oct, 2024 | N/A | Good communication skills | No | No |
Required Visa Status:
Citizen | GC |
US Citizen | Student Visa |
H1B | CPT |
OPT | H4 Spouse of H1B |
GC Green Card |
Employment Type:
Full Time | Part Time |
Permanent | Independent - 1099 |
Contract – W2 | C2H Independent |
C2H W2 | Contract – Corp 2 Corp |
Contract to Hire – Corp 2 Corp |
Description:
POST-DOC POSITION ON NETWORKS OF DEFECTS IN TRANSITION METAL DICHALCOGENIDES (TMDS) FOR QUANTUM RESERVOIR COMPUTING (QRC) DEVELOPMENT - QUONDENSATE PROJECT
- (24000071)
Commitment & contract: post doc co.co.co
Location: Pisa CNI@NEST
Project: Quondensate project - financed by European Commission- aims to achieve the first proof-of-concept of Quantum Reservoir Computing (QRC) scheme based on networks of Quantum Materials (QMs) defects which will enable the fabrication of prototypical computing devices. The project is feasible yet groundbreaking because it capitalizes upon the very different expertises, both experimental and theoretical, comprised within the partners’ consortium, all of which are required to implement a novel QRC scheme. As such, this project will result in unprecedented characteristics that extend the conventional boundaries of ICT electronic devices and systems and pave the way for the development of novel Quantum Technologies.
CUP J53C24000350006 - Grant Agreeement n. 101130384
WHO WE ARE
At IIT we work enthusiastically to develop human-centered Science and Technology to tackle some of the most pressing societal challenges of our times and transfer these technologies to the production system and society. Our Genoa headquarter is strictly inter-connected with our 11 centers around Italy and two outer-stations based in the US for a truly interdisciplinary experience.
Responsibilities:
- To develop approaches to generate defects in transition metal dichalcogenides (TMDs)
- To investigate the structural, electronic and chemical properties of defected WS2 via multiple experimental techniques (examples are – but not limited to – scanning tunneling microscopy, angle resolved photoemission spectroscopy, Raman spectroscopy, X-ray photoemission spectroscopy, photoluminescence
REQUIREMENT SUMMARY
Min:N/AMax:5.0 year(s)
Electrical/Electronic Manufacturing
Engineering Design / R&D
Other
Graduate
Proficient
1
Pisa, Toscana, Italy