Postdoctoral Research Associte - Neuromorphic materials and devices

at  Brookhaven National Laboratory

ORGANIZATION OVERVIEW:

The Center for Functional Nanomaterials (CFN) at Brookhaven is a DOE-funded national scientific user facility, offering users a supported research experience with top-caliber scientists and access to state-of-the- art instrumentation. The CFN mission is advancing nanoscience through frontier fundamental research and technique development and is the nexus of a broad collaboration network. Each year, CFN staff members support the research of nearly 600 external facility users.
Three strategic nanoscience themes underlie the CFN scientific facilities: The CFN conducts research on nanomaterial synthesis by assembly designing precise architectures with targeted functionality by organizing nanoscale components. The CFN researches and applies platforms for state-of-the-art techniques for Accelerated Nanomaterial Discovery, integrating synthesis, advanced characterization, physical modeling, and computer science to iteratively explore a wide range of material parameters. The CFN develops and utilizes advanced capabilities for studies of Nanomaterials in Operando Conditions for characterizing materials and reactions at the atomic scale in real-world environments.

POSITION DESCRIPTION:

The CFN is seeking a talented Postdoctoral Research Associate to conduct novel research developing neuromorphic materials and devices, and to integrate them into application-specific integrated circuits (ASICs) for AI applications. You will explore the materials and device physics of state-of-the-art neuromorphic materials and memristors, such as those based on metal oxides and 2D materials, and develop nanofabrication processes for integrating memristor arrays on commercially fabricated ASIC chips. This project also aims to investigate the origin of memristor stochastic variabilities and their control by novel methods (novel patterning, atomic defect control, etc.). You will work under the supervision of Dr. Chang-Yong Nam (Electronic Nanomaterials Group).

REQUIRED KNOWLEDGE, SKILLS, AND ABILITIES:

• You have a Ph.D. in a relevant discipline (Materials Science, Physics, Electrical Engineering, or a related engineering discipline), conferred within the past five years or to be completed prior to the starting date.
• You have demonstrated experimental expertise in memristor device fabrication and electrical characterization of memristors (including pulse measurements), as well as associated materials and device physics.
• You have demonstrated experimental experience in nanofabrication processes (e.g., electron-beam lithography, physical vapor deposition, atomic layer deposition etc.) and neuromorphic device data analysis.
• You communicate effectively, verbally and in writing, evidenced by peer-reviewed publications and conference presentations/proceedings.
• You are committed to creative and independent research, teamwork, and fostering an environment of safe scientific work practices.
• You are committed to cultivating an inclusive and respectful workplace environment.

• You will fabricate unit memristor devices based on the state-of-the-art neuromorphic materials and device structures.
• You will electrically characterize the fabricated devices, especially their memristive switching characteristics and pulse-based, neuromorphic operational characteristics.
• You will explore new materials, device physics, and patterning methods for improving the performance of neuromorphic devices.
• You will perform nanofabrication of memristor arrays and their integration on commercially fabricated ASIC chips.
• You will collaborate with scientific staff with diverse backgrounds including materials science, nanofabrication, device fabrication and physics, ASIC design and electrical characterization, and AI algorithms and computer science.
• You will disseminate research findings via paper publications and external presentations.