Research Fellow (Epitaxial Regrowth and Material Characterization)
at NANYANG TECHNOLOGICAL UNIVERSITY
Singapore, Southeast, Singapore -
| Start Date | Expiry Date | Salary | Posted On | Experience | Skills | Telecommute | Sponsor Visa |
|---|---|---|---|---|---|---|---|
| Immediate | 13 Oct, 2024 | Not Specified | 15 Jul, 2024 | N/A | Materials Science,Physics,Characterization,English | No | No |
Required Visa Status:
| Citizen | GC |
| US Citizen | Student Visa |
| H1B | CPT |
| OPT | H4 Spouse of H1B |
| GC Green Card |
Employment Type:
| Full Time | Part Time |
| Permanent | Independent - 1099 |
| Contract – W2 | C2H Independent |
| C2H W2 | Contract – Corp 2 Corp |
| Contract to Hire – Corp 2 Corp |
Description:
Responsibilities:
- To conduct research on the development of GaN-based materials growth and device processing.
- Develop regrowth fabrication process using highly doped GaN structure to reduce the Ohmic contact resistance, preferably having worked in clean room process environment
- Support in the growth of GaN epistructures using MBE/MOCVD growth process technology.
- Electrical, structural, surface and optical characterization of III-Nitride semiconductor epiwafers
- Thorough analysis of the results and publish in high impact factor scientific journals.
- Independent handling of the project to meet the deliverables timely.
- Writing project proposal and technical reports to the funding agencies.
- Support PhD students and junior research staff in their research projects
REQUIREMENT SUMMARY
Min:N/AMax:5.0 year(s)
Electrical/Electronic Manufacturing
Engineering Design / R&D
Other
Phd
Proficient
1
Singapore, Singapore
