Junior GaN Technology Developer (m/w/d)
at QubeDot
Braunschweig, Niedersachsen, Germany -
| Start Date | Expiry Date | Salary | Posted On | Experience | Skills | Telecommute | Sponsor Visa |
|---|---|---|---|---|---|---|---|
| Immediate | 21 Aug, 2024 | Not Specified | 22 May, 2024 | 5 year(s) or above | Research | No | No |
Required Visa Status:
| Citizen | GC |
| US Citizen | Student Visa |
| H1B | CPT |
| OPT | H4 Spouse of H1B |
| GC Green Card |
Employment Type:
| Full Time | Part Time |
| Permanent | Independent - 1099 |
| Contract – W2 | C2H Independent |
| C2H W2 | Contract – Corp 2 Corp |
| Contract to Hire – Corp 2 Corp |
Description:
IHR AUFGABENGEBIET:
- Taking over technology development projects
- Driving the development of GaN technologies in collaboration with the team
- Planning, implementation, and evaluation of processes in semiconductor technology, organic, or inorganic chemistry (e.g., Galliumnitrid- and Silicon-Technology)
- Monitoring of safety regulations
- Establishing new measuring instruments or expanding/modifying existing facilities
- Defining and designing test structures for process control.
Responsibilities:
REQUIREMENT SUMMARY
Min:5.0Max:10.0 year(s)
Electrical/Electronic Manufacturing
Engineering Design / R&D
Software Engineering
Graduate
Proficient
1
Braunschweig, Germany
