Principal Engineer -Memory Technology/Design Lead
at Intel
Arizona, Arizona, USA -
Start Date | Expiry Date | Salary | Posted On | Experience | Skills | Telecommute | Sponsor Visa |
---|---|---|---|---|---|---|---|
Immediate | 05 Jul, 2024 | USD 299166 Annual | 05 Apr, 2024 | 10 year(s) or above | Ppa,Characterization,Rom,Design Flow,Sram,Design,Computer Engineering,Layout Design,Digital Circuit Design,Mram,Circuit Design | No | No |
Required Visa Status:
Citizen | GC |
US Citizen | Student Visa |
H1B | CPT |
OPT | H4 Spouse of H1B |
GC Green Card |
Employment Type:
Full Time | Part Time |
Permanent | Independent - 1099 |
Contract – W2 | C2H Independent |
C2H W2 | Contract – Corp 2 Corp |
Contract to Hire – Corp 2 Corp |
Description:
QUALIFICATIONS
- Master’s or PhD in Electrical Engineering, Computer Engineering, or a related discipline
- 10+ years of professional experience.
Required Experience/Knowledge:
- Knowledge of the CMOS ASIC design flow.
- Custom digital circuit design, simulation, layout design, and verification
- Knowledge of EDA tools used for analog, digital and mixed-signal circuit design.
- Post-Si validation experienc
Preferred Experience/Knowledge:
- Design, characterization, and verification of custom memory circuits such as SRAM, Register Files, ROM, DRAM, MRAM, etc.
- Design trade-offs between power, performance, and area (PPA)
- Design technology co-optimization (DTCO
Responsibilities:
As the Memory Technology/Design Lead, you will partner with and leveraging domain experts across various areas of technology development, EDA vendors and product design teams to develop and deliver high-quality industry-leading memory technology collaterals and to drive circuit innovations that enable next generation high-performance, high-density, low-power embedded memory designs on Intel’s advanced CMOS process technologies.
Responsibilities:
- Memory pathfinding activities and power, performance, area (PPA) optimization through design technology co-optimization (DTCO) and product design enablement.
- Memory bit-cell and complex periphery IC layout and automation.
- Memory array/IP design, memory circuit innovation, test-chip design.
- Pre-Si verification, post-Si validation, and debugging to enable yield and parametric tracking/ramp.
- Internal and external customer engagement to enable optimized usage of Intel memory technology
Required Experience/Knowledge:
- Knowledge of the CMOS ASIC design flow.
- Custom digital circuit design, simulation, layout design, and verification
- Knowledge of EDA tools used for analog, digital and mixed-signal circuit design.
- Post-Si validation experience
Preferred Experience/Knowledge:
- Design, characterization, and verification of custom memory circuits such as SRAM, Register Files, ROM, DRAM, MRAM, etc.
- Design trade-offs between power, performance, and area (PPA)
- Design technology co-optimization (DTCO)
REQUIREMENT SUMMARY
Min:10.0Max:15.0 year(s)
Electrical/Electronic Manufacturing
Engineering Design / R&D
Other
Phd
Proficient
1
Arizona, USA